Infineon IKW75N65EH5XKSA1, Type N-Channel IGBT, 90 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 215-6675
- Fabrikantnummer:
- IKW75N65EH5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 10,97
(excl. BTW)
€ 13,274
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 80,00
Op voorraad
- Plus verzending 50 stuk(s) vanaf 30 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 5,485 | € 10,97 |
| 10 - 18 | € 4,985 | € 9,97 |
| 20 - 48 | € 4,655 | € 9,31 |
| 50 - 98 | € 4,33 | € 8,66 |
| 100 + | € 4,00 | € 8,00 |
*prijsindicatie
- RS-stocknr.:
- 215-6675
- Fabrikantnummer:
- IKW75N65EH5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 90A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 395W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Length | 41.42mm | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 90A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 395W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Length 41.42mm | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon insulated-gate bipolar transistor with high speed H5 technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Gerelateerde Links
- Infineon, Type N-Channel IGBT, 90 A 650 V, 3-Pin TO-247, Through Hole
- Infineon, Type N-Channel IGBT, 70 A 650 V, 3-Pin TO-247, Screw
- Infineon IKWH70N65WR6XKSA1, Type N-Channel IGBT, 70 A 650 V, 3-Pin TO-247, Screw
- Infineon, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- Infineon, Type N-Channel IGBT, 62 A 650 V, 3-Pin TO-247, Through Hole
- Infineon, Type N-Channel IGBT, 74 A 650 V, 3-Pin TO-247, Through Hole
- Infineon, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole
- Infineon, Type N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole