Infineon, Type N-Channel IGBT, 90 A 650 V, 3-Pin TO-247, Through Hole

RS-stocknr.:: 215-6674
Fabrikantnummer:: IKW75N65EH5XKSA1
Fabrikant:: Infineon

Infineon, Type N-Channel IGBT, 90 A 650 V, 3-Pin TO-247, Through Hole

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Subtotaal (1 tube van 30 eenheden)*

€ 128,16

(excl. BTW)

€ 155,07

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Verzending vanaf 28 december 2026

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Aantal stuks	Per stuk	Per tube*
30 - 30	€ 4,272	€ 128,16
60 - 120	€ 4,059	€ 121,77
150 +	€ 3,888	€ 116,64

*prijsindicatie

RS-stocknr.:: 215-6674
Fabrikantnummer:: IKW75N65EH5XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	90A
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	395W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	±30 V
	Maximum Collector Emitter Saturation Voltage VceSAT	1.65V
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC
	Series	High Speed Fifth Generation
	Length	41.42mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 90A
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 395W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO ±30 V
	Maximum Collector Emitter Saturation Voltage VceSAT 1.65V
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC
	Series High Speed Fifth Generation
	Length 41.42mm
	Automotive Standard No

Datasheet-IKW75N65EH5XKSA1

Infineon High Speed Fifth Generation Series IGBT, 650V Max Collector Emitter Voltage, 90A Max Continuous Collector Current - IKW75N65EH5XKSA1

This IGBT is a power-switching device designed for high-voltage, high-current applications in industrial electronics. It combines rapid switching capability with robust voltage handling to support inverter and motor-drive topologies. The component is supplied in a through-hole TO-247 package and is manufactured to JEDEC standards for consistent electrical characteristics.

Features and Benefits:

• 650V Vceo rating enables high-voltage inverter designs
• 90A continuous collector current supports heavy motor loads
• 1.65V Vcesat minimises conduction losses at high current
• ±30V gate tolerance allows flexible drive voltages
• 395W power dissipation permits sustained thermal loading
• -40°C to 175°C operating range suits elevated-temperature environments

Applications

• Suitable for industrial motor-drive power stages
• Ideal for three-phase inverter output transistors
• Used with power supplies requiring high-current switching
• Can be used for traction and heavy-duty drive assemblies
• Suitable for through-hole prototyping and PCB-mounted modules

What package characteristics affect thermal transfer?

The TO-247 format provides a large metal backing for heatsink attachment and through-hole leads for secure mounting, allowing efficient conduction of dissipated power to external cooling.

How does the gate voltage limit influence driver selection?

With a maximum gate-emitter rating of ±30V, drivers must keep gate amplitude within this range to prevent device stress while providing adequate drive for fast switching transitions.

What considerations apply for parallel operation of multiple devices?

When sharing current across units, ensure matched Vcesat characteristics and individual gate-drive control

adequate thermal management is required to prevent thermal runaway under unequal load sharing.

How does the device perform under high ambient temperatures?

The specified operating range to 175°C indicates suitability for high-temperature environments, but system-level thermal design must maintain junction temperatures within safe limits given the 395W dissipation capacity.