Infineon, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

RS-stocknr.:: 145-9169
Fabrikantnummer:: IGW50N65H5FKSA1
Fabrikant:: Infineon

Infineon, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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Subtotaal (1 tube van 30 eenheden)*

€ 76,32

(excl. BTW)

€ 92,34

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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120 stuk(s) klaar voor verzending vanaf een andere locatie

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Aantal stuks	Per stuk	Per tube*
30 - 30	€ 2,544	€ 76,32
60 - 120	€ 2,417	€ 72,51
150 +	€ 2,315	€ 69,45

*prijsindicatie

RS-stocknr.:: 145-9169
Fabrikantnummer:: IGW50N65H5FKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	80A
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	305W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Maximum Gate Emitter Voltage VGEO	±20 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.1V
	Maximum Operating Temperature	175°C
	Series	TrenchStop
	Standards/Approvals	RoHS, JEDEC
	Automotive Standard	No
	Energy Rating	0.7mJ

	Alles selecteren
	Merk Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 80A
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 305W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Maximum Gate Emitter Voltage VGEO ±20 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
	Maximum Operating Temperature 175°C
	Series TrenchStop
	Standards/Approvals RoHS, JEDEC
	Automotive Standard No
	Energy Rating 0.7mJ

Land van herkomst:: MY

Infineon TrenchStop Series IGBT, 650V Maximum Collector Emitter Voltage, 80A Max Continuous Collector Current - IGW50N65H5FKSA1

This insulated-gate bipolar transistor is a high-voltage switching device designed for power conversion and control in demanding electronics. It is configured as an N-channel power transistor in a through-hole TO-247 package and serves applications requiring robust collector-emitter voltage handling and elevated current capacity. The component complies with common industry environmental and packaging norms, and its thermal endurance allows use across a wide ambient range.

Features and Benefits:

• 650V collector-emitter capability for high-voltage switching applications
• 80A continuous collector current to handle substantial load currents
• 2.1V saturation voltage minimises conduction losses for efficiency
• 305W power dissipation supports high-power operation
• ±20V gate-emitter rating secures gate-drive flexibility
• 0.7mJ energy rating provides avalanche energy tolerance

Applications

• Suitable for motor-drive inverter stages in industrial equipment
• Used with high-voltage power supplies and converters
• Ideal for switch-mode power in traction electronics
• Can be used for industrial welding and induction heating control
• Suitable for power-factor correction and renewable-energy inverters

What temperature extremes can it withstand in operation?

The device operates over a wide temperature span from -40°C up to 175°C, enabling use in harsh thermal environments.

Which mounting approach is required for thermal management?

It is supplied in a TO-247 through-hole package intended for heatsinking to manage the 305W maximum dissipation.

Which standards cover its environmental and packaging acceptance?

The component meets RoHS restrictions and adheres to JEDEC packaging norms.

How many electrical connections does it use and what is the channel type?

It presents three pins for connection and is implemented as an N-type channel transistor.