Infineon IKWH70N65WR6XKSA1 Single IGBT, 70 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
- RS-stocknr.:
- 232-6747
- Fabrikantnummer:
- IKWH70N65WR6XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 4,56
(excl. BTW)
€ 5,52
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 4,56 |
| 10 - 24 | € 4,33 |
| 25 - 49 | € 4,16 |
| 50 - 99 | € 3,97 |
| 100 + | € 3,70 |
*prijsindicatie
- RS-stocknr.:
- 232-6747
- Fabrikantnummer:
- IKWH70N65WR6XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 70 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 145 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247-3-HCC | |
| Configuration | Single | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 70 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 145 W | ||
Number of Transistors 1 | ||
Package Type TO-247-3-HCC | ||
Configuration Single | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
The Infineon's 70 A reverse conducting TRENCHSTOP 5 WR6 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creep age distances.
Monolithically integrated diode
Lowest switching losses
Improved reliability against package contamination
Lowest switching losses
Improved reliability against package contamination
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