STMicroelectronics STGWA20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247
- RS-stocknr.:
- 206-7210
- Fabrikantnummer:
- STGWA20H65DFB2
- Fabrikant:
- STMicroelectronics
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- RS-stocknr.:
- 206-7210
- Fabrikantnummer:
- STGWA20H65DFB2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 147 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 147 W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
The STMicroelectronics Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO-247 long leads package.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
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