STMicroelectronics STGWA20HP65FB2, N-Channel IGBT, 40 A 650 V, 3-Pin TO-247
- RS-stocknr.:
- 204-3945
- Fabrikantnummer:
- STGWA20HP65FB2
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 30 eenheden)*
€ 54,72
(excl. BTW)
€ 66,21
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 90 | € 1,824 | € 54,72 |
| 120 - 240 | € 1,775 | € 53,25 |
| 270 - 480 | € 1,728 | € 51,84 |
| 510 - 990 | € 1,684 | € 50,52 |
| 1020 + | € 1,642 | € 49,26 |
*prijsindicatie
- RS-stocknr.:
- 204-3945
- Fabrikantnummer:
- STGWA20HP65FB2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
- Land van herkomst:
- CN
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Maximum junction temperature of 175°C
Co-packaged protection diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive temperature coefficient
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