STMicroelectronics STGWA30H65DFB2 IGBT, 50 A 650 V, 3-Pin TO-247
- RS-stocknr.:
- 204-9878
- Fabrikantnummer:
- STGWA30H65DFB2
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 19,03
(excl. BTW)
€ 23,025
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 5 stuk(s) vanaf 15 december 2025
- Plus verzending 655 stuk(s) vanaf 22 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 3,806 | € 19,03 |
| 10 + | € 3,04 | € 15,20 |
*prijsindicatie
- RS-stocknr.:
- 204-9878
- Fabrikantnummer:
- STGWA30H65DFB2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 167 W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 167 W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
- Land van herkomst:
- CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Gerelateerde Links
- STMicroelectronics STGWA30H65DFB2 IGBT, 50 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA50HP65FB2 IGBT, 86 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA30HP65FB IGBT, 30 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA100H65DFB2 IGBT, 145 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA40IH65DF IGBT, 40 A 650 V, 3-Pin TO-247
- onsemi AFGHL50T65SQ IGBT, 50 A 650 V, 3-Pin TO-247