STMicroelectronics STGWA30H65DFB2 IGBT, 50 A 650 V, 3-Pin TO-247
- RS-stocknr.:
- 204-9877
- Fabrikantnummer:
- STGWA30H65DFB2
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 74,52
(excl. BTW)
€ 90,18
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 630 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 90 | € 2,484 | € 74,52 |
| 120 - 270 | € 2,109 | € 63,27 |
| 300 - 570 | € 2,052 | € 61,56 |
| 600 - 1170 | € 2,00 | € 60,00 |
| 1200 + | € 1,95 | € 58,50 |
*prijsindicatie
- RS-stocknr.:
- 204-9877
- Fabrikantnummer:
- STGWA30H65DFB2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 167 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 167 W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Pin Count 3 | ||
- Land van herkomst:
- CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
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