STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247
- RS-stocknr.:
- 206-8630
- Fabrikantnummer:
- STGWA30IH65DF
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 18,42
(excl. BTW)
€ 22,29
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending 450 stuk(s) vanaf 03 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 3,684 | € 18,42 |
| 25 - 45 | € 3,584 | € 17,92 |
| 50 - 120 | € 3,49 | € 17,45 |
| 125 - 245 | € 3,40 | € 17,00 |
| 250 + | € 3,314 | € 16,57 |
*prijsindicatie
- RS-stocknr.:
- 206-8630
- Fabrikantnummer:
- STGWA30IH65DF
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 108 W | |
| Package Type | TO-247 | |
| Pin Count | 4 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 108 W | ||
Package Type TO-247 | ||
Pin Count 4 | ||
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Designed for soft commutation only
Maximum junction temperature: TJ = 175 °C
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low drop voltage freewheeling co-packaged diode
Positive VCE(sat) temperature coefficient
Maximum junction temperature: TJ = 175 °C
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low drop voltage freewheeling co-packaged diode
Positive VCE(sat) temperature coefficient
Gerelateerde Links
- STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247
- STMicroelectronics STGW75H65DFB2-4 IGBT, 115 A 650 V, 4-Pin TO-247
- onsemi FGHL40T65MQDT IGBT, 60 A 650 V TO-247-3L
- STMicroelectronics STGWA50HP65FB2 IGBT, 86 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA30H65DFB2 IGBT, 50 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA30HP65FB IGBT, 30 A 650 V, 3-Pin TO-247