STMicroelectronics STGWA30HP65FB, Type N-Channel IGBT, 30 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 202-5515
- Fabrikantnummer:
- STGWA30HP65FB
- Fabrikant:
- STMicroelectronics
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€ 11,94
(excl. BTW)
€ 14,445
(incl. BTW)
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- Plus verzending 5 stuk(s) vanaf 23 maart 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 2,388 | € 11,94 |
| 10 + | € 2,036 | € 10,18 |
*prijsindicatie
- RS-stocknr.:
- 202-5515
- Fabrikantnummer:
- STGWA30HP65FB
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 260W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Length | 15.9mm | |
| Standards/Approvals | RoHS | |
| Width | 21.1 mm | |
| Series | STG | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 260W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Length 15.9mm | ||
Standards/Approvals RoHS | ||
Width 21.1 mm | ||
Series STG | ||
Automotive Standard No | ||
The STMicroelectronics high speed HB series IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.
Low thermal resistance
Very fast soft recovery antiparallel diode
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