onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount
- RS-stocknr.:
- 166-3807
- Fabrikantnummer:
- ISL9V2040D3ST
- Fabrikant:
- onsemi
Subtotaal (1 rol van 2500 eenheden)*
€ 2.132,50
(excl. BTW)
€ 2.580,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 13 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,853 | € 2.132,50 |
*prijsindicatie
- RS-stocknr.:
- 166-3807
- Fabrikantnummer:
- ISL9V2040D3ST
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current | 10 A | |
| Maximum Collector Emitter Voltage | 450 V | |
| Maximum Gate Emitter Voltage | ±14V | |
| Maximum Power Dissipation | 130 W | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 6.73 x 6.22 x 2.39mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current 10 A | ||
Maximum Collector Emitter Voltage 450 V | ||
Maximum Gate Emitter Voltage ±14V | ||
Maximum Power Dissipation 130 W | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 6.73 x 6.22 x 2.39mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Gerelateerde Links
- onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount
- onsemi FGD3440G2-F085 IGBT, 26.9 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
- onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
- onsemi FGD3040G2-F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
- STMicroelectronics STGD5H60DF IGBT, 10 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
- STMicroelectronics STGD5NB120SZT4 IGBT, 10 A 1200 V, 3-Pin DPAK (TO-252), Surface Mount
- Fairchild FGD3245G2_F085 IGBT, 23 A 450 V, 3-Pin DPAK, Surface Mount
- STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount