Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Maximum Continuous Collector Current	21 A
	Maximum Collector Emitter Voltage	300 V
	Maximum Gate Emitter Voltage	±10V
	Maximum Power Dissipation	150 W
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Channel Type	N
	Pin Count	3
	Switching Speed	1MHz
	Transistor Configuration	Single
	Dimensions	6.73 x 6.22 x 2.39mm
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-40 °C

	Alles selecteren
	Merk onsemi
	Maximum Continuous Collector Current 21 A
	Maximum Collector Emitter Voltage 300 V
	Maximum Gate Emitter Voltage ±10V
	Maximum Power Dissipation 150 W
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Channel Type N
	Pin Count 3
	Switching Speed 1MHz
	Transistor Configuration Single
	Dimensions 6.73 x 6.22 x 2.39mm
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -40 °C

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

Discrete IGBTs, Fairchild Semiconductor

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