onsemi FGD3040G2-F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 5 eenheden)*

€ 10,82

(excl. BTW)

€ 13,09

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • 5 stuk(s) klaar voor verzending vanaf een andere locatie
  • Plus verzending 1.820 stuk(s) vanaf 23 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per verpakking*
5 - 45€ 2,164€ 10,82
50 - 95€ 1,982€ 9,91
100 +€ 1,848€ 9,24

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
807-0767
Fabrikantnummer:
FGD3040G2-F085
Fabrikant:
onsemi
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

onsemi

Maximum Continuous Collector Current

41 A

Maximum Collector Emitter Voltage

300 V

Maximum Gate Emitter Voltage

±10V

Maximum Power Dissipation

150 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.39mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Automotive Ignition IGBT, Fairchild Semiconductor


These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.

Features


• Logic-level gate drive
• ESD Protection
• Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications

RS Product Codes


864-8802 FGB3040CS 400V 20A D2PAK

864-8805 FGB3040G2_F085 400V 25A DPAK-2

807-0767 FGD3040G2_F085 400V 25A DPAK

864-8880 FGI3040G2_F085 400V 25A I2PAK

864-8899 FGP3040G2_F085 400V 25A TO220

864-8809 FGB3245G2_F085 450V 23A D2PAK-2

864-8827 FGD3245G2_F085 450V 23A DPAK

807-0776 FGD3440G2_F085 400V 25A DPAK

864-8818 FGB3440G2_F085 400V 25A D2PAK-2

864-8893 FGP3440G2_F085 400V 25A TO220

807-8751 ISL9V5036P3_F085 360V 31A TO220

862-9369 ISL9V5045S3ST_F085 450V 43A D2PAK

Note

Quoted current ratings apply when junction temperature Tc = +110°C.

Standards

AEC-Q101


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Gerelateerde Links