Infineon 4 kB Serial-I2C (2 Wire) FRAM 8-Pin SOIC, FM24C04B-G
- RS-stocknr.:
- 188-5395
- Fabrikantnummer:
- FM24C04B-G
- Fabrikant:
- Infineon
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 188-5395
- Fabrikantnummer:
- FM24C04B-G
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | FRAM | |
| Memory Size | 4kB | |
| Organisation | 512 x 8 bit | |
| Interface Type | Serial-I2C (2 Wire) | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 3000ns | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Width | 3.98mm | |
| Height | 1.48mm | |
| Length | 4.97mm | |
| Maximum Operating Temperature | 85°C | |
| Number of Words | 512 | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type FRAM | ||
Memory Size 4kB | ||
Organisation 512 x 8 bit | ||
Interface Type Serial-I2C (2 Wire) | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 3000ns | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Width 3.98mm | ||
Height 1.48mm | ||
Length 4.97mm | ||
Maximum Operating Temperature 85°C | ||
Number of Words 512 | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
- Land van herkomst:
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore Ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.