Infineon 4 kB Serial-I2C FRAM 8-Pin SOIC-8
- RS-stocknr.:
- 273-7379
- Fabrikantnummer:
- FM24CL04B-G
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 2,70
(excl. BTW)
€ 3,26
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 2.706 stuk(s) vanaf 02 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 1,35 | € 2,70 |
| 10 - 18 | € 1,23 | € 2,46 |
| 20 - 48 | € 1,215 | € 2,43 |
| 50 - 98 | € 1,19 | € 2,38 |
| 100 + | € 1,075 | € 2,15 |
*prijsindicatie
- RS-stocknr.:
- 273-7379
- Fabrikantnummer:
- FM24CL04B-G
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | FRAM | |
| Memory Size | 4kB | |
| Organisation | 512 x 8 bit | |
| Interface Type | Serial-I2C | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 1MHz | |
| Package Type | SOIC-8 | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Minimum Operating Temperature | -40°C | |
| Automotive Standard | No | |
| Minimum Supply Voltage | 2.7V | |
| Maximum Supply Voltage | 3.65V | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type FRAM | ||
Memory Size 4kB | ||
Organisation 512 x 8 bit | ||
Interface Type Serial-I2C | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 1MHz | ||
Package Type SOIC-8 | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Minimum Operating Temperature -40°C | ||
Automotive Standard No | ||
Minimum Supply Voltage 2.7V | ||
Maximum Supply Voltage 3.65V | ||
The Infineon FRAM is a 4 Kbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other non volatile memories. Unlike EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Fast 2 wire Serial interface
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
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