Infineon 16kbit Serial-I2C FRAM Memory 8-Pin SOIC, FM24C16B-G
- RS-stocknr.:
- 273-7377
- Fabrikantnummer:
- FM24C16B-G
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 4,21
(excl. BTW)
€ 5,094
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 66 stuk(s) vanaf 15 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 2,105 | € 4,21 |
| 10 - 18 | € 1,865 | € 3,73 |
| 20 - 48 | € 1,83 | € 3,66 |
| 50 - 98 | € 1,79 | € 3,58 |
| 100 + | € 1,615 | € 3,23 |
*prijsindicatie
- RS-stocknr.:
- 273-7377
- Fabrikantnummer:
- FM24C16B-G
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Memory Size | 16kbit | |
| Organisation | 2K x 8 | |
| Interface Type | Serial-I2C | |
| Data Bus Width | 8bit | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Memory Size 16kbit | ||
Organisation 2K x 8 | ||
Interface Type Serial-I2C | ||
Data Bus Width 8bit | ||
Package Type SOIC | ||
Pin Count 8 | ||
The Infineon FRAM is a 16 Kbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other non volatile memories. Unlike EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Fast 2 wire Serial interface
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
Low power consumption
Fast 2 wire Serial interface
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
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