Infineon 64 kB Serial-I2C Serial (I2C) Automotive FRAM 8-Pin SOIC-8, FM24CL64B-DG
- RS-stocknr.:
- 273-7380
- Fabrikantnummer:
- FM24CL64B-DG
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 81 eenheden)*
€ 210,924
(excl. BTW)
€ 255,231
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending 1.620 stuk(s) vanaf 02 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 81 - 81 | € 2,604 | € 210,92 |
| 162 + | € 2,327 | € 188,49 |
*prijsindicatie
- RS-stocknr.:
- 273-7380
- Fabrikantnummer:
- FM24CL64B-DG
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Serial (I2C) Automotive FRAM | |
| Memory Size | 64kB | |
| Organisation | 8k x 8 bit | |
| Interface Type | Serial-I2C | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 1MHz | |
| Package Type | SOIC-8 | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 125°C | |
| Number of Words | 8K | |
| Minimum Operating Temperature | 40°C | |
| Automotive Standard | AEC-Q100 Grade 1 | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 3V | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Serial (I2C) Automotive FRAM | ||
Memory Size 64kB | ||
Organisation 8k x 8 bit | ||
Interface Type Serial-I2C | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 1MHz | ||
Package Type SOIC-8 | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 125°C | ||
Number of Words 8K | ||
Minimum Operating Temperature 40°C | ||
Automotive Standard AEC-Q100 Grade 1 | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 3V | ||
The Infineon FRAM is a 64 Kbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other non volatile memories. Unlike EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Fast 2 wire Serial interface
AEC Q100 Grade 1 compliant
High endurance 10 trillion read and write
Advanced high reliability ferroelectric process
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