IGBTs | Insulated Gate Bipolar Transistor | RS
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    IGBTs

    IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors: Bipolar transistors and MOSFET. RS have a curated range of IGBTs from a multitude of trusted brands, including Infineon, ON Semiconductor, STMicroelectronics, and many more.

    How do IGBT transistors work?

    IGBT transistors are three-terminal devices which apply a voltage to a semiconductor, changing its properties to block power flow when it's in the off state and allow power flow in the on state. They are controlled by a metal oxide semiconductor gate structure and are widely used for switching electrical power in applications, such as welding, electric cars, air conditioners, trains, and uninterruptible power supplies.

    What are the different types of IGBT Transistors?

    There are various types of IGBT transistors and they are categorised by different parameters, such as maximum voltage, collector current, packaging type, and switching speed. The type of IGBT transistor you choose will vary depending on the exact power level and the applications being considered, and so it is important to know as many of your exact requirements as possible to choose the correct IGBT for your application.

    What is a difference between MOSFETs and IGBTs?

    An IGBT has a much lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. However, MOSFETs are characterised by a lower forward voltage at lower current densities due to the absence of diode Vf in the IGBT's output BJT.An IGBT transistor module (insulated-gate bipolar transistor) consists of one or more IGBTs and is used in many types of industrial equipment due to its reliability. IGBT transistors are a cross between bipolar junction transistors (BJTs) and MOSFETs. They are highly efficient and fast switching, plus they have high current and low saturation voltage characteristics.

    What is a typical application of IGBTs?

    IGBTs are widely used in electronic applications, including: consumer electronics, industrial technology, transportation and electric motors, aerospace electronic devices, and applications within the energy sector.

    2468 Producten voor IGBTs

    onsemi
    120 A
    650 V
    ±20V
    600 W
    -
    -
    TO-3PN
    Through Hole
    N
    3
    -
    Single
    15.8 x 5 x 20.1mm
    Infineon
    30 A
    600 V
    20V
    110 W
    1
    Single Collector, Single Emitter, Single Gate
    TO-263-3
    -
    -
    -
    -
    -
    -
    Infineon
    11.9 A
    11.4 V
    20V
    500 mW
    -
    -
    PG-SOT23-6-3
    -
    N
    6
    -
    Common Emitter
    -
    Infineon
    80 A
    1200 V
    ±20V
    483 W
    -
    -
    TO-247
    Through Hole
    N
    3
    -
    Single
    16.03 x 5.16 x 21.1mm
    Infineon
    450 A
    1200 V
    20V
    20 mW
    2
    Dual
    ECONOD
    -
    N
    -
    -
    Dual
    -
    STMicroelectronics
    40 A
    650 V
    ±20V
    238 W
    1
    -
    TO-247
    -
    N
    3
    -
    Common Emitter
    -
    Infineon
    80 A
    650 V
    ±20 V, ±30V
    395 W
    1
    -
    TO-247
    Through Hole
    N
    3
    30kHz
    Single
    16.13 x 5.21 x 21.1mm
    onsemi
    80 A
    1200 V
    ±20V
    298 W
    -
    -
    D2PAK (TO-263)
    Surface Mount
    N
    3
    1MHz
    Single
    10.67 x 11.33 x 4.83mm
    Infineon
    300 A
    1200 V
    ±20V
    1600 W
    -
    Series
    62MM Module
    Panel Mount
    N
    7
    -
    Series
    106.4 x 61.4 x 30.9mm
    Infineon
    85 A
    650 V
    30V
    227 W
    1
    Single
    PG-TO247
    -
    N
    3
    -
    -
    -
    Infineon
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Infineon
    50 A
    1200 V
    ±20V
    349 W
    -
    -
    TO-247
    Through Hole
    N
    3
    -
    Single
    16.13 x 5.21 x 21.1mm
    STMicroelectronics
    -
    650 V
    ±30V
    167 W
    1
    -
    TO-247 long leads
    -
    N
    3
    -
    Series
    -
    onsemi
    -
    1200 V
    ±20V
    145 W
    -
    -
    Q13-TNPC
    Surface Mount
    N
    44
    -
    -
    83 x 37.9 x 12.5mm
    Infineon
    95 A
    650 V
    ±20V
    250 W
    -
    Series
    EASY2B
    PCB Mount
    N
    27
    1MHz
    Series
    56.7 x 48 x 12mm
    ROHM
    71 A
    650 V
    ±30V
    202 W
    1
    Single Collector, Single Emitter, Single Gate
    TO-247GE
    -
    -
    -
    -
    -
    -
    Infineon
    45 A
    600 V
    ±20V
    187 W
    -
    -
    TO-247
    Through Hole
    N
    3
    -
    Single
    16.13 x 5.21 x 21.1mm
    Toshiba
    30 A
    600 V
    ±20V
    170 W
    -
    -
    TO-3P
    Through Hole
    N
    3
    1MHz
    Single
    15.9 x 4.8 x 20mm
    ROHM
    40 A
    650 V
    ±30V
    214 W
    1
    Single
    TO-247N
    Through Hole
    N
    3
    -
    Common Emitter
    -
    Infineon
    100 A
    1200 V
    ±20V
    652 W
    -
    Single
    PG-TO247-3-46
    -
    -
    -
    -
    -
    -
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