BGAP2S30AE6327XTSA1 Infineon Pre-Driver for Wireless Infrastructure Applications 35 dB, 16-Pin 4200 MHz TSNP-16
- RS-stocknr.:
- 349-420
- Fabrikantnummer:
- BGAP2S30AE6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 6,23
(excl. BTW)
€ 7,54
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 20 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 6,23 |
| 10 - 99 | € 5,62 |
| 100 - 499 | € 5,16 |
| 500 - 999 | € 4,80 |
| 1000 + | € 4,30 |
*prijsindicatie
- RS-stocknr.:
- 349-420
- Fabrikantnummer:
- BGAP2S30AE6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Pre-Driver for Wireless Infrastructure Applications | |
| Operating Frequency | 4200 MHz | |
| Technology | BiCMOS | |
| Gain | 35dB | |
| Package Type | TSNP-16 | |
| Minimum Supply Voltage | 4.75V | |
| Pin Count | 16 | |
| Maximum Supply Voltage | 5.5V | |
| Noise Figure | 3.7dB | |
| Minimum Operating Temperature | -40°C | |
| Third Order Intercept OIP3 | 34.1dBm | |
| Maximum Operating Temperature | 115°C | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Height | 8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Pre-Driver for Wireless Infrastructure Applications | ||
Operating Frequency 4200 MHz | ||
Technology BiCMOS | ||
Gain 35dB | ||
Package Type TSNP-16 | ||
Minimum Supply Voltage 4.75V | ||
Pin Count 16 | ||
Maximum Supply Voltage 5.5V | ||
Noise Figure 3.7dB | ||
Minimum Operating Temperature -40°C | ||
Third Order Intercept OIP3 34.1dBm | ||
Maximum Operating Temperature 115°C | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Height 8mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon 3.3 to 4.2 GHz mid band driver amplifier that can be used as pre driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input and outputs are single-ended and internally matched to 50 Ω.
BiCMOS technology for an optimized performance
High gain and high power for fewer components in line up
Internal matching and saving external matching components
Easy design in and small area footprint
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