BGAP2S20AE6327XTSA1 Infineon Pre-Driver for Wireless Infrastructure Applications 34.8 dB, 16-Pin 2700 MHz TSNP-16
- RS-stocknr.:
- 349-418
- Fabrikantnummer:
- BGAP2S20AE6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 6,23
(excl. BTW)
€ 7,54
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 6,23 |
| 10 - 99 | € 5,62 |
| 100 - 499 | € 5,16 |
| 500 - 999 | € 4,80 |
| 1000 + | € 4,30 |
*prijsindicatie
- RS-stocknr.:
- 349-418
- Fabrikantnummer:
- BGAP2S20AE6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Operating Frequency | 2700 MHz | |
| Product Type | Pre-Driver for Wireless Infrastructure Applications | |
| Technology | BiCMOS | |
| Gain | 34.8dB | |
| Package Type | TSNP-16 | |
| Minimum Supply Voltage | 4.75V | |
| Maximum Supply Voltage | 5.5V | |
| Pin Count | 16 | |
| Third Order Intercept OIP3 | 34.2dBm | |
| Noise Figure | 4.3dB | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 115°C | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Height | 8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Operating Frequency 2700 MHz | ||
Product Type Pre-Driver for Wireless Infrastructure Applications | ||
Technology BiCMOS | ||
Gain 34.8dB | ||
Package Type TSNP-16 | ||
Minimum Supply Voltage 4.75V | ||
Maximum Supply Voltage 5.5V | ||
Pin Count 16 | ||
Third Order Intercept OIP3 34.2dBm | ||
Noise Figure 4.3dB | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 115°C | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Height 8mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input and outputs are single-ended and internally matched to 50 Ω.
BiCMOS technology for an optimized performance
High gain and high power for fewer components in line up
Internal matching and saving external matching components
Easy design in and small area footprint
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