DiodesZetex DMN3067LW Type N-Channel MOSFET, 2.6 A, 30 V Enhancement, 3-Pin SC-70 DMN3067LW-7
- RS-stocknr.:
- 921-1094
- Fabrikantnummer:
- DMN3067LW-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 50 eenheden)*
€ 9,30
(excl. BTW)
€ 11,25
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 80,00
Op voorraad
- 1.850 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 200 | € 0,186 | € 9,30 |
| 250 - 950 | € 0,11 | € 5,50 |
| 1000 - 1950 | € 0,084 | € 4,20 |
| 2000 - 2950 | € 0,078 | € 3,90 |
| 3000 + | € 0,072 | € 3,60 |
*prijsindicatie
- RS-stocknr.:
- 921-1094
- Fabrikantnummer:
- DMN3067LW-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMN3067LW | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 98mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.6nC | |
| Maximum Power Dissipation Pd | 1.1W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMN3067LW | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 98mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.6nC | ||
Maximum Power Dissipation Pd 1.1W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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