DiodesZetex BSS127 Type N-Channel MOSFET, 70 mA, 600 V Enhancement, 3-Pin SC-59
- RS-stocknr.:
- 122-2848
- Fabrikantnummer:
- BSS127SSN-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 249,00
(excl. BTW)
€ 300,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 27 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,083 | € 249,00 |
| 6000 - 12000 | € 0,081 | € 243,00 |
| 15000 - 27000 | € 0,078 | € 234,00 |
| 30000 - 72000 | € 0,076 | € 228,00 |
| 75000 + | € 0,074 | € 222,00 |
*prijsindicatie
- RS-stocknr.:
- 122-2848
- Fabrikantnummer:
- BSS127SSN-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SC-59 | |
| Series | BSS127 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.08nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.3mm | |
| Length | 3.1mm | |
| Width | 1.7 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SC-59 | ||
Series BSS127 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.08nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.25W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.3mm | ||
Length 3.1mm | ||
Width 1.7 mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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