Vishay IRF510 Type N-Channel Power MOSFET, 5.6 A, 100 V Enhancement, 3-Pin TO-220AB

RS-stocknr.:: 919-0023
Fabrikantnummer:: IRF510PBF
Fabrikant:: Vishay

Vishay IRF510 Type N-Channel Power MOSFET, 5.6 A, 100 V Enhancement, 3-Pin TO-220AB

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Subtotaal (1 tube van 50 eenheden)*

€ 36,20

(excl. BTW)

€ 43,80

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 500 stuk(s) vanaf 29 juni 2026
Plus verzending 3.100 stuk(s) vanaf 06 juli 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 0,724	€ 36,20
100 - 200	€ 0,615	€ 30,75
250 +	€ 0,543	€ 27,15

*prijsindicatie

RS-stocknr.:: 919-0023
Fabrikantnummer:: IRF510PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5.6A
	Maximum Drain Source Voltage Vds	100V
	Series	IRF510
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	540mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	2.5V
	Maximum Power Dissipation Pd	43W
	Typical Gate Charge Qg @ Vgs	8.3nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Height	9.01mm
	Width	4.7mm
	Standards/Approvals	RoHS
	Length	10.41mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5.6A
	Maximum Drain Source Voltage Vds 100V
	Series IRF510
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 540mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 2.5V
	Maximum Power Dissipation Pd 43W
	Typical Gate Charge Qg @ Vgs 8.3nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Height 9.01mm
	Width 4.7mm
	Standards/Approvals RoHS
	Length 10.41mm
	Automotive Standard No

Land van herkomst:: CN

Vishay IRF510 Series Power MOSFET, 100V Maximum Drain Source Voltage, 5.6A Maximum Continuous Drain Current - IRF510PBF

This power MOSFET is a through‑hole N‑channel enhancement device designed for switching and amplification tasks in industrial and electronic systems. It operates across a wide temperature range and is intended for applications requiring moderate current handling and high voltage blocking capability in a TO‑220AB package.

Features and Benefits:

• 100V drain‑source rating for high‑voltage switching capability • 5.6A continuous drain current for moderate load handling • 540mΩ Rds(on) to limit conduction losses under load • 43W power dissipation to support thermal headroom in assemblies • 20V gate‑source limit allowing flexible drive voltages • 8.3nC typical gate charge enabling predictable switching profiles

Applications

• Suitable for motor driver stages in automation equipment • Ideal for power switching in laboratory power supplies • Used for load switching in test and measurement rigs • Can be used for analogue amplifier outputs in control systems

What operating temperatures can it tolerate in harsh environments?

It functions from -55°C up to 175°C, allowing use in demanding temperature conditions.

How is the device mounted for mechanical and thermal stability?

It uses a through‑hole mount in a TO‑220AB package, permitting secure PCB fastening and straightforward heatsinking.

What gate drive considerations affect switching performance?

The typical gate charge of 8.3nC at rated Vgs influences driver current requirements and switching speed trade‑offs.

What should be considered when pairing with a heatsink?

With 43W maximum dissipation, heatsink thermal resistance and airflow must be sized to keep junction temperature within limits.