Infineon HEXFETPower MOSFET Type N-Channel MOSFET, 353 A, 24 V Enhancement, 3-Pin TO-220AB IRF1324PBF
- RS-stocknr.:
- 688-6807
- Fabrikantnummer:
- IRF1324PBF
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 2 eenheden)*
€ 2,05
(excl. BTW)
€ 2,48
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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- Verzending 762 stuk(s) vanaf 11 maart 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 + | € 1,025 | € 2,05 |
*prijsindicatie
- RS-stocknr.:
- 688-6807
- Fabrikantnummer:
- IRF1324PBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 353A | |
| Maximum Drain Source Voltage Vds | 24V | |
| Series | HEXFETPower MOSFET | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 9.02mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 353A | ||
Maximum Drain Source Voltage Vds 24V | ||
Series HEXFETPower MOSFET | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 9.02mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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