Infineon SIPMOS Type P-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-220 SPP80P06PHXKSA1

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RS-stocknr.:
914-0194
Fabrikantnummer:
SPP80P06PHXKSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

60V

Series

SIPMOS

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

23mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.6V

Typical Gate Charge Qg @ Vgs

115nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

340W

Maximum Operating Temperature

175°C

Length

10.36mm

Standards/Approvals

No

Width

4.57 mm

Height

15.95mm

Distrelec Product Id

304-37-850

Automotive Standard

No

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A Plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)

· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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