Infineon CoolMOS C6 Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 911-5029
- Fabrikantnummer:
- IPW60R190C6FKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 66,96
(excl. BTW)
€ 81,03
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending 180 stuk(s) vanaf 15 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 2,232 | € 66,96 |
| 60 - 120 | € 2,12 | € 63,60 |
| 150 - 270 | € 2,031 | € 60,93 |
| 300 - 570 | € 1,942 | € 58,26 |
| 600 + | € 1,808 | € 54,24 |
*prijsindicatie
- RS-stocknr.:
- 911-5029
- Fabrikantnummer:
- IPW60R190C6FKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS C6 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 151W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Width | 5.21 mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS C6 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 151W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Width 5.21 mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
- Land van herkomst:
- DE
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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