N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 Infineon IPW60R190C6FKSA1
- RS-stocknr.:
- 753-3074
- Fabrikantnummer:
- IPW60R190C6FKSA1
- Fabrikant:
- Infineon
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 05/05/2025, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Per stuk
€ 3,71
(excl. BTW)
€ 4,49
(incl. BTW)
| Aantal stuks | Per stuk |
| 1 - 9 | € 3,71 |
| 10 - 24 | € 3,53 |
| 25 - 49 | € 3,38 |
| 50 - 99 | € 3,22 |
| 100 + | € 3,00 |
- RS-stocknr.:
- 753-3074
- Fabrikantnummer:
- IPW60R190C6FKSA1
- Fabrikant:
- Infineon
Wetgeving en conformiteit
Productomschrijving
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247 |
| Series | CoolMOS C6 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 190 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 151 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V |
| Width | 5.21mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 16.13mm |
| Minimum Operating Temperature | -55 °C |
| Height | 21.1mm |