Infineon OptiMOS 3 Type N-Channel MOSFET, 25 A, 250 V Enhancement, 8-Pin TDSON BSC600N25NS3GATMA1

RS-stocknr.:: 906-4303
Fabrikantnummer:: BSC600N25NS3GATMA1
Fabrikant:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 25 A, 250 V Enhancement, 8-Pin TDSON BSC600N25NS3GATMA1

Subtotaal (1 verpakking van 5 eenheden)*

€ 13,97

(excl. BTW)

€ 16,905

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

4.510 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
5 +	€ 2,794	€ 13,97

*prijsindicatie

RS-stocknr.:: 906-4303
Fabrikantnummer:: BSC600N25NS3GATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	250V
	Package Type	TDSON
	Series	OptiMOS 3
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	22nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.1mm
	Length	6.1mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 250V
	Package Type TDSON
	Series OptiMOS 3
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 22nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.1mm
	Length 6.1mm
	Automotive Standard No

Vrijgesteld

Infineon OptiMOS 3 Series MOSFET, 250V Drain Source Voltage, 25A Continuous Drain Current - BSC600N25NS3GATMA1

This MOSFET is a high-voltage N-channel transistor designed for power switching in surface‑mount applications. It operates across an extended thermal range and is suited to circuits requiring robust drain‑to‑source voltage handling and moderate continuous current. The device is supplied in an 8‑pin TDSON package for compact board‑level integration.

Features and Benefits:

• 250V drain voltage enables high‑voltage switching applications
• 25A continuous current supports substantial load handling
• 60mΩ Rds(on) reduces conduction losses during operation
• 22nC typical gate charge enables responsive switching performance
• 125W maximum power dissipation allows elevated thermal loading

Applications

• Suitable for high‑voltage DC-DC converters on power boards
• Ideal for synchronous rectification in power supplies
• Used with motor‑drive stages requiring 25A handling
• Can be used for switch‑mode power supplies with tight footprints
• Appropriate for industrial switching circuits exposed to temperature extremes

What gate voltage limits should be observed during design?

The gate‑source voltage must not exceed 20V to prevent gate‑oxide stress and ensure device reliability.

How does the channel type affect circuit topology choices?

As an N‑channel enhancement device, it is typically placed on the low‑side of switches or used in synchronous topologies for improved efficiency.

What thermal environment can it tolerate during operation?

The component functions from -55°C up to 150°C, permitting use in wide‑temperature installations where ambient conditions vary.

Which package mounting considerations are recommended?

The TDSON surface‑mount format requires appropriate PCB thermal pads and soldering profiles to manage heat dissipation and mechanical stability.