onsemi SuperFET Type N-Channel MOSFET, 7 A, 600 V Enhancement, 3-Pin TO-252 FCD7N60TM
- RS-stocknr.:
- 903-4131
- Fabrikantnummer:
- FCD7N60TM
- Fabrikant:
- onsemi
Subtotaal (1 verpakking van 5 eenheden)*
€ 10,09
(excl. BTW)
€ 12,21
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 45 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 7.200 stuk(s) vanaf 27 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 2,018 | € 10,09 |
*prijsindicatie
- RS-stocknr.:
- 903-4131
- Fabrikantnummer:
- FCD7N60TM
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SuperFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.39mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SuperFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 2.39mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an Advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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