onsemi SuperFET Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-263 FCB11N60TM

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Verpakkingsopties
RS-stocknr.:
671-0337
Fabrikantnummer:
FCB11N60TM
Fabrikant:
onsemi
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Merk

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

SuperFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

380mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

40nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Length

10.67mm

Height

4.83mm

Standards/Approvals

No

Width

9.65 mm

Automotive Standard

No

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor


Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.

Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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