Toshiba Single 2SK 1 Type N-Channel MOSFET, 3 A, 900 V Enhancement, 3-Pin SC-67 2SK3564,S5Q(J
- RS-stocknr.:
- 890-2686
- Fabrikantnummer:
- 2SK3564,S5Q(J
- Fabrikant:
- Toshiba
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,12
(excl. BTW)
€ 7,405
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 1,224 | € 6,12 |
| 25 - 45 | € 1,198 | € 5,99 |
| 50 - 95 | € 1,174 | € 5,87 |
| 100 - 245 | € 1,15 | € 5,75 |
| 250 + | € 1,13 | € 5,65 |
*prijsindicatie
- RS-stocknr.:
- 890-2686
- Fabrikantnummer:
- 2SK3564,S5Q(J
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Series | 2SK | |
| Package Type | SC-67 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.3Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | -1.9V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 40W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Height | 15mm | |
| Standards/Approvals | No | |
| Width | 4.5 mm | |
| Length | 10mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 900V | ||
Series 2SK | ||
Package Type SC-67 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.3Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf -1.9V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 40W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Height 15mm | ||
Standards/Approvals No | ||
Width 4.5 mm | ||
Length 10mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
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