N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN Toshiba TK9J90E

RS-stocknr.:: 168-7789
Fabrikantnummer:: TK9J90E
Fabrikant:: Toshiba

N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN Toshiba TK9J90E

150 op voorraad - levertijd is 1 werkdag(en).

Geschatte totale prijs (25 Aantal stuks)

€ 75,08

(excl. BTW)

€ 90,85

(incl. BTW)

Aantal stuks	Per stuk	Per tube*
25 +	€ 3,003	€ 75,075
*prijsindicatie

RS-stocknr.:: 168-7789
Fabrikantnummer:: TK9J90E
Fabrikant:: Toshiba

TK9J90E, MOSFET Silicon N-Channel MOS Data Sheet
ESD Control Selection Guide V1

RS-stocknr.:: 168-7789
Fabrikantnummer:: TK9J90E
Fabrikant:: Toshiba

TK9J90E, MOSFET Silicon N-Channel MOS Data Sheet
ESD Control Selection Guide V1

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	9 A
Maximum Drain Source Voltage	900 V
Package Type	TO-3PN
Series	TK
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	1.3 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	4.5mm
Length	15.5mm
Typical Gate Charge @ Vgs	46 nC @ 10 V
Transistor Material	Si
Height	20mm

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	9 A
Maximum Drain Source Voltage	900 V
Package Type	TO-3PN
Series	TK
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	1.3 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	4.5mm
Length	15.5mm
Typical Gate Charge @ Vgs	46 nC @ 10 V
Transistor Material	Si
Height	20mm

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