Infineon OptiMOS T N-Channel MOSFET, 70 A, 100 V, 3-Pin TO-220 IPP70N10S3L12AKSA1
- RS-stocknr.:
- 857-6956
- Fabrikantnummer:
- IPP70N10S3L12AKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 500 eenheden)*
€ 565,50
(excl. BTW)
€ 684,50
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 500 - 2000 | € 1,131 | € 565,50 |
| 2500 - 4500 | € 1,102 | € 551,00 |
| 5000 + | € 1,075 | € 537,50 |
*prijsindicatie
- RS-stocknr.:
- 857-6956
- Fabrikantnummer:
- IPP70N10S3L12AKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 70 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | OptiMOS T | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 15.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 10mm | |
| Width | 4.4mm | |
| Height | 15.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 70 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS T | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 15.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Transistor Material Si | ||
Length 10mm | ||
Width 4.4mm | ||
Height 15.65mm | ||
Minimum Operating Temperature -55 °C | ||
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