Infineon OptiMOS T N-Channel MOSFET, 70 A, 100 V, 3-Pin TO-220 IPP70N10S3L12AKSA1

RS-stocknr.:: 857-6956
Fabrikantnummer:: IPP70N10S3L12AKSA1
Fabrikant:: Infineon

Infineon OptiMOS T N-Channel MOSFET, 70 A, 100 V, 3-Pin TO-220 IPP70N10S3L12AKSA1

Bulkkorting beschikbaar

Subtotaal (1 tube van 500 eenheden)*

€ 565,50

(excl. BTW)

€ 684,50

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk

Aantal stuks	Per stuk	Per tube*
500 - 2000	€ 1,131	€ 565,50
2500 - 4500	€ 1,102	€ 551,00
5000 +	€ 1,075	€ 537,50

*prijsindicatie

RS-stocknr.:: 857-6956
Fabrikantnummer:: IPP70N10S3L12AKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	70 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220
	Series	OptiMOS T
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	15.8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.4V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	125 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.4mm
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Length	10mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	60 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Height	15.65mm

	Alles selecteren
	Merk Infineon
	Channel Type N
	Maximum Continuous Drain Current 70 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220
	Series OptiMOS T
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 15.8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.4V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 125 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.4mm
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Length 10mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 60 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Height 15.65mm

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS T N-Channel MOSFET, 70 A, 100 V, 3-Pin TO-220 IPP70N10S3L12AKSA1

Infineon OptiMOS™T Power MOSFETs

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