Infineon OptiMOS 3 Type N-Channel MOSFET, 70 A, 40 V N, 3-Pin TO-220 IPA041N04NGXKSA1
- RS-stocknr.:
- 214-4350
- Fabrikantnummer:
- IPA041N04NGXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 15 eenheden)*
€ 24,84
(excl. BTW)
€ 30,06
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 90 stuk(s) vanaf 02 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 - 60 | € 1,656 | € 24,84 |
| 75 - 135 | € 1,573 | € 23,60 |
| 150 - 360 | € 1,507 | € 22,61 |
| 375 - 735 | € 1,441 | € 21,62 |
| 750 + | € 1,341 | € 20,12 |
*prijsindicatie
- RS-stocknr.:
- 214-4350
- Fabrikantnummer:
- IPA041N04NGXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS 3 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.68mm | |
| Width | 16.15 mm | |
| Height | 4.85mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS 3 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.68mm | ||
Width 16.15 mm | ||
Height 4.85mm | ||
Automotive Standard No | ||
This Infineon OptiMOS 3 MOSFET features not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology.
It is Halogen-free according to IEC61249-2-21
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