Infineon HEXFET Type N-Channel MOSFET, 28 A, 55 V Enhancement, 3-Pin TO-252 IRLR2705TRPBF

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Verpakkingsopties
RS-stocknr.:
830-3348
Fabrikantnummer:
IRLR2705TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

68W

Maximum Gate Source Voltage Vgs

16 V

Typical Gate Charge Qg @ Vgs

25nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

2.39mm

Length

6.73mm

Width

6.22 mm

Standards/Approvals

No

Automotive Standard

No

Land van herkomst:
CN

Infineon HEXFET Series MOSFET, 28A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLR2705TRPBF


This MOSFET is engineered for outstanding performance across a range of electronic applications. Leveraging modern advancements in MOSFET technology, it plays a significant role in switching applications where efficiency and dependability are essential. Its distinct features make it an excellent option for automation and electrical systems that require high current handling and robust operation.

Features & Benefits


• High continuous drain current of 28A improves performance

• Maximum voltage rating of 55V boosts switching capabilities

• Low on-resistance of 65mΩ minimises energy loss

• Operates effectively at temperatures up to +175°C

• Designed for surface mounting in a DPAK TO-252 package for efficiency

• Single enhancement mode configuration facilitates circuit design

Applications


• Suitable for power management in industrial automation

• Ideal for energy-efficient switching in power supplies

• Commonly utilised in motor control circuits

• Appropriate for use in DC-DC converters

What is the maximum power dissipation for this component?


The maximum power dissipation is 68W, allowing for efficient heat management during operation.

How does the operating temperature range affect usage?


The device operates effectively between -55°C and +175°C, making it suitable for various environmental conditions.

Is there a specific installation method recommended for this MOSFET?


The device is designed for surface mounting using techniques like soldering to ensure reliable connections.

Can this MOSFET be used in parallel with others?


Yes, it can be used in parallel configurations, but proper thermal management is essential to prevent overheating.

What type of gate drive is recommended for optimal performance?


A logic-level gate drive is recommended for efficient switching, ensuring the device operates within its specified threshold levels.

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