Infineon HEXFET Type N-Channel MOSFET, 56 A, 55 V Enhancement, 3-Pin TO-252
- RS-stocknr.:
- 222-4750
- Fabrikantnummer:
- IRFR2405TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 rol van 2000 eenheden)*
€ 964,00
(excl. BTW)
€ 1.166,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 06 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 - 2000 | € 0,482 | € 964,00 |
| 4000 + | € 0,458 | € 916,00 |
*prijsindicatie
- RS-stocknr.:
- 222-4750
- Fabrikantnummer:
- IRFR2405TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160kΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 110W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 2.39 mm | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160kΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 110W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 2.39 mm | ||
Height 6.22mm | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET, 56 A, 55 V Enhancement, 3-Pin TO-252 IRFR2405TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 56 A, 55 V TO-252
- Infineon HEXFET Type N-Channel MOSFET, 56 A, 55 V TO-252 IRFR2405TRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 44 A, 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET, 25 A, 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET, 60 A, 55 V Enhancement, 3-Pin TO-252