Vishay Si8489EDB Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 4-Pin MICRO FOOT SI8489EDB-T2-E1
- RS-stocknr.:
- 818-1438
- Fabrikantnummer:
- SI8489EDB-T2-E1
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 5,32
(excl. BTW)
€ 6,44
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 22 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,266 | € 5,32 |
| 200 - 980 | € 0,25 | € 5,00 |
| 1000 - 1980 | € 0,226 | € 4,52 |
| 2000 - 4980 | € 0,213 | € 4,26 |
| 5000 + | € 0,199 | € 3,98 |
*prijsindicatie
- RS-stocknr.:
- 818-1438
- Fabrikantnummer:
- SI8489EDB-T2-E1
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | MICRO FOOT | |
| Series | Si8489EDB | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.8V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Typical Gate Charge Qg @ Vgs | 17.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.268mm | |
| Standards/Approvals | No | |
| Width | 1 mm | |
| Length | 1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type MICRO FOOT | ||
Series Si8489EDB | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.8V | ||
Maximum Power Dissipation Pd 1.8W | ||
Typical Gate Charge Qg @ Vgs 17.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.268mm | ||
Standards/Approvals No | ||
Width 1 mm | ||
Length 1mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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