Vishay Si4178DY N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3

RS-stocknr.:: 812-3205
Fabrikantnummer:: SI4178DY-T1-GE3
Fabrikant:: Vishay

Vishay Si4178DY N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3

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Subtotaal (1 verpakking van 20 eenheden)*

€ 10,68

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€ 12,92

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Aantal stuks	Per stuk	Per verpakking*
20 - 180	€ 0,534	€ 10,68
200 - 480	€ 0,427	€ 8,54
500 - 980	€ 0,401	€ 8,02
1000 - 1980	€ 0,348	€ 6,96
2000 +	€ 0,289	€ 5,78

*prijsindicatie

RS-stocknr.:: 812-3205
Fabrikantnummer:: SI4178DY-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOIC
	Series	Si4178DY
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	7.5nC
	Maximum Power Dissipation Pd	5W
	Maximum Gate Source Voltage Vgs	-25V, +25V
	Forward Voltage Vf	850mV
	Maximum Operating Temperature	150°C
	Width	4mm
	Length	5mm
	Standards/Approvals	RoHS
	Height	1.55mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOIC
	Series Si4178DY
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 7.5nC
	Maximum Power Dissipation Pd 5W
	Maximum Gate Source Voltage Vgs -25V, +25V
	Forward Voltage Vf 850mV
	Maximum Operating Temperature 150°C
	Width 4mm
	Length 5mm
	Standards/Approvals RoHS
	Height 1.55mm
	Automotive Standard No

Land van herkomst:: CN

Vishay Si4178DY Series MOSFET, 30V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SI4178DY-T1-GE3

This MOSFET is a surface-mount N-channel enhancement device designed for power switching and management in compact electronic systems. It offers moderate voltage handling and high continuous current capability, suited to applications where efficient high-current switching and thermal endurance are required. The component complies with RoHS and is intended for board-level mounting in industry and commercial designs.

Features and Benefits:

• 30V drain rating enables medium-voltage switching applications
• 12A continuous current supports high-current load control
• 33mΩ Rds(on) reduces conduction losses in power paths
• 7.5nC typical gate charge allows fast gate transitions
• 5W power dissipation helps manage thermal load in small packages

Applications

• Suitable for DC-DC converter output stages
• Ideal for battery management and power distribution
• Used with motor drivers for compact actuators
• Can be used for load switching in telecom equipment

What gate voltage limitations must designers observe?

The device accepts up to 25V between gate and source, so gate drivers must remain within this limit to avoid gate-oxide stress.

How does thermal performance influence PCB layout decisions?

With a 5W dissipation rating, designers should provide adequate copper area and thermal vias beneath the SOIC footprint to improve heat-spreading and maintain junction temperature within limits.

What ambient temperature range can it operate within?

It functions reliably from -55°C to 150°C, which informs selection for applications exposed to wide thermal extremes.

What package and mounting considerations affect assembly?

The part is supplied in an SOIC-8 surface-mount package with an overall profile height of 1.55mm, so stencil design and solder-paste volume must be tuned for consistent solder joints.