STMicroelectronics Single 1 Type N, Type N-Channel MOSFET, 2.5 A, 800 V Enhancement, 8-Pin PowerFLAT STL4N80K5
- RS-stocknr.:
- 792-5903
- Fabrikantnummer:
- STL4N80K5
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 5 eenheden)*
€ 10,69
(excl. BTW)
€ 12,935
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 20 | € 2,138 | € 10,69 |
| 25 - 45 | € 2,032 | € 10,16 |
| 50 - 120 | € 1,832 | € 9,16 |
| 125 - 245 | € 1,644 | € 8,22 |
| 250 + | € 1,564 | € 7,82 |
*prijsindicatie
- RS-stocknr.:
- 792-5903
- Fabrikantnummer:
- STL4N80K5
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 38W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.4mm | |
| Standards/Approvals | No | |
| Length | 6.35mm | |
| Height | 0.95mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N, Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 38W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Width 5.4mm | ||
Standards/Approvals No | ||
Length 6.35mm | ||
Height 0.95mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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