STMicroelectronics MDmesh K5, SuperMESH5 Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 168-8627
- Fabrikantnummer:
- STP2N80K5
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 28,30
(excl. BTW)
€ 34,25
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 16 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 0,566 | € 28,30 |
| 100 - 200 | € 0,551 | € 27,55 |
| 250 - 450 | € 0,537 | € 26,85 |
| 500 + | € 0,524 | € 26,20 |
*prijsindicatie
- RS-stocknr.:
- 168-8627
- Fabrikantnummer:
- STP2N80K5
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | MDmesh K5, SuperMESH5 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 15.75mm | |
| Length | 10.4mm | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series MDmesh K5, SuperMESH5 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 15.75mm | ||
Length 10.4mm | ||
Width 4.6 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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