onsemi Type N-Channel MOSFET, 560 mA, 30 V Enhancement, 3-Pin SOT-23 NTR4003NT1G
- RS-stocknr.:
- 790-5283
- Fabrikantnummer:
- NTR4003NT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 100 eenheden)*
€ 4,70
(excl. BTW)
€ 5,70
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tekort aan aanbod
- 300 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 23.300 stuk(s) vanaf 09 januari 2026
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 100 - 400 | € 0,047 | € 4,70 |
| 500 - 900 | € 0,04 | € 4,00 |
| 1000 + | € 0,035 | € 3,50 |
*prijsindicatie
- RS-stocknr.:
- 790-5283
- Fabrikantnummer:
- NTR4003NT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 560mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 1.15nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 690mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Height | 1.01mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 560mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 1.15nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 690mW | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Height 1.01mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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