onsemi Type N-Channel MOSFET, 3.2 A, 20 V Enhancement, 3-Pin SOT-23 NTR4501NT1G
- RS-stocknr.:
- 688-9146
- Fabrikantnummer:
- NTR4501NT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 0,54
(excl. BTW)
€ 0,66
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 332 stuk(s) vanaf 23 februari 2026
- Plus verzending 5.274 stuk(s) vanaf 02 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 58 | € 0,27 | € 0,54 |
| 60 - 118 | € 0,25 | € 0,50 |
| 120 - 198 | € 0,215 | € 0,43 |
| 200 - 498 | € 0,205 | € 0,41 |
| 500 + | € 0,20 | € 0,40 |
*prijsindicatie
- RS-stocknr.:
- 688-9146
- Fabrikantnummer:
- NTR4501NT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.25W | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.94mm | |
| Length | 2.9mm | |
| Width | 1.3 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.25W | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.94mm | ||
Length 2.9mm | ||
Width 1.3 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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