onsemi PowerTrench Type N-Channel MOSFET, 3.2 A, 100 V Enhancement, 4-Pin SOT-223 FDT86106LZ
- RS-stocknr.:
- 759-9706
- Fabrikantnummer:
- FDT86106LZ
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 7,30
(excl. BTW)
€ 8,85
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending 4.000 stuk(s) vanaf 15 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,46 | € 7,30 |
| 50 - 95 | € 1,258 | € 6,29 |
| 100 - 495 | € 1,09 | € 5,45 |
| 500 - 995 | € 0,958 | € 4,79 |
| 1000 + | € 0,872 | € 4,36 |
*prijsindicatie
- RS-stocknr.:
- 759-9706
- Fabrikantnummer:
- FDT86106LZ
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 189mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.2W | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.7mm | |
| Height | 1.7mm | |
| Width | 6.7 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 189mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.2W | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.7mm | ||
Height 1.7mm | ||
Width 6.7 mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi PowerTrench Type N-Channel MOSFET, 3.2 A, 100 V Enhancement, 4-Pin SOT-223
- onsemi PowerTrench Type N-Channel MOSFET, 5.6 A, 100 V Enhancement, 4-Pin SOT-223
- onsemi PowerTrench Type N-Channel MOSFET, 3.3 A, 100 V Enhancement, 4-Pin SOT-223
- onsemi PowerTrench Type N-Channel MOSFET, 2.8 A, 150 V Enhancement, 4-Pin SOT-223
- onsemi PowerTrench Type N-Channel MOSFET, 6.6 A, 100 V Enhancement, 4-Pin SOT-223
- onsemi PowerTrench Type N-Channel MOSFET, 5.6 A, 100 V Enhancement, 4-Pin SOT-223 FDT1600N10ALZ
- onsemi PowerTrench Type N-Channel MOSFET, 6.6 A, 100 V Enhancement, 4-Pin SOT-223 FDT86102LZ
- onsemi PowerTrench Type N-Channel MOSFET, 3.3 A, 100 V Enhancement, 4-Pin SOT-223 FDT86113LZ