Infineon HEXFET Type P-Channel MOSFET, 2.6 A, 20 V Enhancement, 3-Pin SOT-23 IRLML2246TRPBF
- RS-stocknr.:
- 760-4432
- Fabrikantnummer:
- IRLML2246TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 1,36
(excl. BTW)
€ 1,645
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Plus verzending 275 stuk(s) vanaf 12 januari 2026
- Laatste verzending 110.440 stuk(s) vanaf 19 januari 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 0,272 | € 1,36 |
| 50 - 245 | € 0,26 | € 1,30 |
| 250 - 495 | € 0,248 | € 1,24 |
| 500 - 1245 | € 0,232 | € 1,16 |
| 1250 + | € 0,22 | € 1,10 |
*prijsindicatie
- RS-stocknr.:
- 760-4432
- Fabrikantnummer:
- IRLML2246TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 236mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.3W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Distrelec Product Id | 304-45-315 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 236mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.3W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Distrelec Product Id 304-45-315 | ||
Automotive Standard No | ||
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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