Infineon OptiMOS 3 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin TDSON BSZ100N06LS3GATMA1
- RS-stocknr.:
- 752-8255
- Fabrikantnummer:
- BSZ100N06LS3GATMA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 5 eenheden)*
€ 4,74
(excl. BTW)
€ 5,735
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 34.780 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 0,948 | € 4,74 |
*prijsindicatie
- RS-stocknr.:
- 752-8255
- Fabrikantnummer:
- BSZ100N06LS3GATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS 3 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 2.1W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS 3 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 2.1W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Width 3.4 mm | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Gerelateerde Links
- Infineon OptiMOS 3 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET, 46 A, 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET, 46 A, 60 V Enhancement, 8-Pin TDSON BSC097N06NSATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 5 Type N-Channel MOSFET, 40 A, 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET & Diode, 137 A, 60 V Enhancement, 8-Pin TDSON