Infineon OptiMOS 5 Type N-Channel MOSFET, 40 A, 60 V Enhancement, 8-Pin TDSON

RS-stocknr.:: 178-7497
Fabrikantnummer:: BSZ042N06NSATMA1
Fabrikant:: Infineon

Infineon OptiMOS 5 Type N-Channel MOSFET, 40 A, 60 V Enhancement, 8-Pin TDSON

Subtotaal (1 rol van 5000 eenheden)*

€ 2.495,00

(excl. BTW)

€ 3.020,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 22 januari 2027

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Aantal stuks	Per stuk	Per rol*
5000 +	€ 0,499	€ 2.495,00

*prijsindicatie

RS-stocknr.:: 178-7497
Fabrikantnummer:: BSZ042N06NSATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOS 5
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6.3mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	69W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	27nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.4mm
	Width	3.4mm
	Height	1.1mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOS 5
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6.3mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 69W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 27nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.4mm
	Width 3.4mm
	Height 1.1mm
	Automotive Standard No

Datasheet

Vrijgesteld

Infineon OptiMOS 5 Series MOSFET, 60V Drain Source Voltage, 40A Continuous Drain Current - BSZ042N06NSATMA1

This MOSFET is a silicon N-channel enhancement device intended for high-power switching in surface-mount applications. It operates across a wide temperature span and is designed to handle substantial currents and voltages typical of power conversion and switching stages. The component is supplied in a low-profile TDSON package suitable for compact assemblies where thermal and electrical performance are required.

Features and Benefits:

• 60V drain rating enables robust mid-voltage switching
• 40A continuous current capability supports high-load circuits
• 6.3 mΩ low Rds(on) reduces conduction losses
• 27 nC typical gate charge allows faster gate transitions
• 69W power dissipation permits sustained power handling

Applications

• Suitable for synchronous buck converter stages
• Ideal for motor driver half-bridge assemblies
• Used with DC-DC power modules in server supplies
• Can be used for battery management and charging circuits

What gate-drive considerations should I account for?

The typical gate charge of 27 nC at the specified gate voltage necessitates a driver capable of sourcing and sinking sufficient peak current to achieve the required switching speed without excessive transition losses.

How does the package affect thermal performance?

The TDSON 8-pin layout provides a low thermal-resistance path to the PCB, enabling effective heat transfer when used with appropriate copper area and thermal vias for elevated power dissipation.

What temperature range can it tolerate during operation?

It is rated to function across a wide operating-temperature window from deep cold to high-temperature environments, accommodating designs exposed to extreme conditions.

How is switching behaviour impacted by device characteristics?

The combination of low on-resistance and moderate gate charge balances low conduction losses with controllable switching transitions, making it suitable for efficiency-focused power stages.