Vishay SUM110P06-08L Type P-Channel MOSFET, 110 A, 60 V Enhancement, 3-Pin TO-263 SUM110P06-08L-E3
- RS-stocknr.:
- 710-5014
- Fabrikantnummer:
- SUM110P06-08L-E3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 17,74
(excl. BTW)
€ 21,465
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 01 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 3,548 | € 17,74 |
| 25 - 45 | € 3,014 | € 15,07 |
| 50 - 120 | € 2,834 | € 14,17 |
| 125 - 245 | € 2,662 | € 13,31 |
| 250 + | € 2,128 | € 10,64 |
*prijsindicatie
- RS-stocknr.:
- 710-5014
- Fabrikantnummer:
- SUM110P06-08L-E3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | SUM110P06-08L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.75W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.41mm | |
| Height | 4.83mm | |
| Width | 9.65 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series SUM110P06-08L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.75W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.41mm | ||
Height 4.83mm | ||
Width 9.65 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- TW
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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