Vishay Type P-Channel Power MOSFET, 110 A, 80 V, 3-Pin TO-263 SUM110P08-11L-E3
- RS-stocknr.:
- 180-7977
- Fabrikantnummer:
- SUM110P08-11L-E3
- Fabrikant:
- Vishay
Subtotaal (1 verpakking van 2 eenheden)*
€ 7,72
(excl. BTW)
€ 9,34
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
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Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 + | € 3,86 | € 7,72 |
*prijsindicatie
- RS-stocknr.:
- 180-7977
- Fabrikantnummer:
- SUM110P08-11L-E3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0112Ω | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.414 mm | |
| Standards/Approvals | RoHS | |
| Length | 15.875mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0112Ω | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Maximum Operating Temperature 175°C | ||
Width 10.414 mm | ||
Standards/Approvals RoHS | ||
Length 15.875mm | ||
Automotive Standard No | ||
Vishay MOSFET
The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 80V and maximum gate-source voltage of 20V. It has a drain-source resistance of 11.2mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Applications
• Adaptor switches
• DC/DC primary switches
• Load switches
• Power management
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