Vishay IRFL9014 Type P-Channel Power MOSFET, -1.8 A, -60 V Enhancement, 4-Pin SOT-223 IRFL9014TRPBF

RS-stocknr.:: 710-4654
Fabrikantnummer:: IRFL9014TRPBF
Fabrikant:: Vishay

Vishay IRFL9014 Type P-Channel Power MOSFET, -1.8 A, -60 V Enhancement, 4-Pin SOT-223 IRFL9014TRPBF

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Subtotaal (1 verpakking van 10 eenheden)*

€ 9,46

(excl. BTW)

€ 11,45

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per verpakking*
10 - 40	€ 0,946	€ 9,46
50 - 90	€ 0,899	€ 8,99
100 - 240	€ 0,68	€ 6,80
250 - 490	€ 0,614	€ 6,14
500 +	€ 0,52	€ 5,20

*prijsindicatie

RS-stocknr.:: 710-4654
Fabrikantnummer:: IRFL9014TRPBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-1.8A
	Maximum Drain Source Voltage Vds	-60V
	Package Type	SOT-223
	Series	IRFL9014
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	500mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	3.1W
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Typical Gate Charge Qg @ Vgs	12nC
	Forward Voltage Vf	-5.5V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	6.7mm
	Height	1.45mm
	Width	3.7mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -1.8A
	Maximum Drain Source Voltage Vds -60V
	Package Type SOT-223
	Series IRFL9014
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 500mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 3.1W
	Maximum Gate Source Voltage Vgs -20V, +20V
	Typical Gate Charge Qg @ Vgs 12nC
	Forward Voltage Vf -5.5V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 6.7mm
	Height 1.45mm
	Width 3.7mm
	Automotive Standard No

Vishay IRFL9014 Series Power MOSFET, 60V Maximum Drain Source Voltage, 3.1W Maximum Power Dissipation - IRFL9014TRPBF

This power MOSFET is a P-channel enhancement device designed for surface-mount switching and power-management tasks. It operates across a wide ambient range and is intended for applications requiring controlled gate drive and moderate power handling in compact packages.

Features and Benefits:

• Vds rating supports switching up to -60V for higher voltages
• Continuous drain current of -1.8A for steady load handling
• Rds(on) at 500mΩ reduces conduction losses in switching paths
• Typical gate charge 12nC enables faster gate transitions
• Vf of -5.5V assists in predictable forward conduction behaviour
• Power dissipation 3.1W allows sustained thermal loading

Applications

• Suitable for surface-mount low-side and high-side switching
• Ideal for compact power-rail polarity control circuits
• Used for load switching in battery-powered equipment
• Can be used for level-shift and gate-drive circuitry
• Suitable for thermally constrained board designs requiring compact parts

What thermal extremes can this component tolerate in operation?

It is specified for use from -55°C up to 150°C enabling operation in harsh thermal environments.

Which package and mounting style does the device use?

The device comes in a SOT-223 package intended for surface mounting to facilitate compact PCB layouts.

What gate voltage limits must be observed when designing a driver?

The maximum gate-to-source rating is 20V, so gate-drive circuitry must not exceed this threshold.

How many electrical connections are provided for PCB routing?

The component provides four pins to support gate, drain and source routing considerations.