Infineon OptiMOS Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 4-Pin SOT-223 BSP372NH6327XTSA1

RS-stocknr.:: 110-7754
Artikelnummer Distrelec:: 304-36-977
Fabrikantnummer:: BSP372NH6327XTSA1
Fabrikant:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 4-Pin SOT-223 BSP372NH6327XTSA1

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 50 eenheden)*

€ 35,70

(excl. BTW)

€ 43,20

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

800 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
50 - 50	€ 0,714	€ 35,70
100 - 200	€ 0,578	€ 28,90
250 - 450	€ 0,543	€ 27,15
500 - 1200	€ 0,507	€ 25,35
1250 +	€ 0,464	€ 23,20

*prijsindicatie

RS-stocknr.:: 110-7754
Artikelnummer Distrelec:: 304-36-977
Fabrikantnummer:: BSP372NH6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.8A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SOT-223
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	270mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.8W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	9.5nC
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Length	6.5mm
	Height	1.6mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.8A
	Maximum Drain Source Voltage Vds 100V
	Package Type SOT-223
	Series OptiMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 270mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.8W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 9.5nC
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Length 6.5mm
	Height 1.6mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP372NH6327XTSA1

This MOSFET is a surface‑mount switching transistor designed for use where compact, high‑voltage N‑channel control is required. It operates across a wide temperature range suitable for demanding environments and is intended for applications that need moderate continuous current with efficient switching behaviour.

Features and Benefits:

• 100V drain‑source capability supports high‑voltage circuits
• 270 mΩ low RDS(on) reduces conduction losses
• 1.8A continuous drain current for steady load handling
• 9.5 nC typical gate charge enables fast drive response
• 1.8W power dissipation manages thermal stress in SOT‑223
• 20V maximum gate drive allows flexible gate‑drive design

Applications

• Suitable for automotive electronic subsystems requiring rugged parts
• Ideal for DC‑DC converters in compact power modules
• Used with motor drivers needing high‑voltage switching
• Can be used for battery management and charging circuits
• Used for general‑purpose switching in industrial control boards

What package allows easy soldering and thermal transfer?

The device is supplied in a SOT‑223 surface‑mount package providing a balance of compact footprint and a larger tab for heat dissipation.

How does it cope with extreme ambient conditions?

It is specified to operate from -55 °C up to 150 °C, covering low‑temperature starts and high‑temperature operating scenarios.

What gate voltage limits should designers observe?

The gate‑to‑source voltage must not exceed ±20V to remain within safe operating bounds.

What type of channel and mode does it use?

It utilises an N‑channel enhancement‑mode topology designed for standard switching and control tasks.